CHARACTERISTIC EVALUATING METHOD AND DEVICE OF INSULATED GATE TRANSISTOR, MANUFACTURE THERE OF AND READING COMPUTER WHEREIN CHACTERISTIC EVALUATING PROGRAM IS RECORDED.

摘要

PROBLEM TO BE SOLVED: To improve extraction accuracy of an effective channel width in a drain current method. SOLUTION: A transistor having the wide channel width as a reference and a transistor having the narrow channel width as the extracting object for the effective channel width are prepared (step ST1.1). From the mask-channel width and the characteristic curve of the conductance plane between a source and a drain, the imaginary point where the change of the conductance between the source and the drain is estimated as approximately 0 even if gate over-drive is finely changed, is extracted. The value of the function F, which is determined by the difference between the rate of the conductance change in the coordinates of the imaginary point and the product obtained by multiplying the conductance per unit width by the changing rate of the mask-channel width, is computed. (step ST1.6). From the shifting amountδ, where the standard deviation of the function F obtained in a step ST 1.7 becomes minimum, the true threshold of the transistor having the narrow channel width is determined (step ST 1.10).