SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To impart appropriate threshold voltages and characteristics suitable for suppressing hot carriers to the respective plural transistors of different breakdown strengths, in a semiconductor device provided with the transistor of high breakdown strength and the transistor of low breakdown strength inside the same chip. SOLUTION: A low breakdown strength NMOS 12 and a high breakdown strength NMOS 14 are provided inside the same chip. To an LDD extension(LDDEX) 106 formed on both sides of the channel region 102 of the low breakdown strength NMOS 12 and the LDDEX 108 formed on both sides of the channel region 104 of the high breakdown strength NMOS 14, different impurity profiles are supplied (Pa≠Pb). Impurity profiles Pa and Pb are the profiles for turning the threshold voltages of the respective MOSs into appropriate values and effectively suppressing the generation of the hot carriers inside the respective MOSs.