发明名称 DATA INPUT CIRCUIT FOR SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a data input circuit for a semiconductor storage device in which a through current is suppressed by preventing completely operation of a write-amplifier driving a data bus during pre-charge of a data bus. SOLUTION: A data bus pre-charge signal DBPCB is inputted to a write- amplifier driving circuit 2, an output of a write-amplifier 4 is made to be in a high impedance state by this data bus pre-charge signal DBPCV. Thereby, it can be prevented that a through current is generated from a pre-charge transistor 6 through the write-amplifier 4 during pre-charge of data buses DB, *DB.
申请公布号 JP2000067579(A) 申请公布日期 2000.03.03
申请号 JP19980239068 申请日期 1998.08.25
申请人 SANYO ELECTRIC CO LTD 发明人 MOGI HIROSHI
分类号 G11C11/409;(IPC1-7):G11C11/409 主分类号 G11C11/409
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