发明名称 FORMATION OF POLARIZATION INVERSION STRUCTURE
摘要 <p>PROBLEM TO BE SOLVED: To make it possible to easily form fine polarization inversion structures on material with which the formation of the fine polarization inversion is difficult by causing the polarization inversion of one ferroelectric material among two kinds of the ferroelectric materials varying in spontaneous polarization and causing the polarization inversion of the other ferroelectric material joined thereto. SOLUTION: The ferroelectric single crystal thin film 11, with which the generation of polarization inversion nuclei is difficult, is formed by a liquid crystal epitaxial method on a ferroelectric single crystal substrate 1 and thereafter comb-shaped electrodes 12 on the side, where the inversion is initiated, out of a pair are formed on the main surface of the ferroelectric single crystal substrate 1. A uniform electrode 13 is formed on the ferroelectric single crystal thin film 11. When voltage is impressed between a pair of these electrodes, the fine polarization inversion structures are formed on the main surface 14 of the substrate 1. The polarization inversion structures grow and arrive at the boundary between the ferroelectric single crystal substrate 1 and the ferroelectric single crystal thin film 11 and with these structure as a trigger, the polarizer progresses beyond the boundary and the periodic polarization inversion structures are formed in the ferroelectric single crystal thin film 11.</p>
申请公布号 JP2000066254(A) 申请公布日期 2000.03.03
申请号 JP19980231770 申请日期 1998.08.18
申请人 MATSUSHITA ELECTRIC IND CO LTD;NGK INSULATORS LTD 发明人 MIZUUCHI KIMINORI;YAMAMOTO KAZUHISA;KAWAGUCHI TATSUO;IMAEDA MINORU
分类号 G02B6/12;G02F1/35;G02F1/355;G02F1/37;G02F1/377;(IPC1-7):G02F1/37 主分类号 G02B6/12
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