| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the degradation in dimensional accuracy and production yield which occurs in poor flatness as the degradation occurs if an antistatic film is manufactured by a photolithography method adjacently to buffer layers in order to improve the characteristics of an optical waveguide device. SOLUTION: Waveguides 2 are formed on an LiNbO3 substrate 1 and after an SiO2 film is formed thereon, the film is formed to required patterns, by which the buffer layers 3 are formed. Terrace structures 6G are formed between the buffer layer 3 simultaneously therewith. Further, the antistatic film 5 is formed over the entire surface and a photoresist mask is formed thereon. The antistatic film is formed to the required patterns by utilizing this photoresist mask. Further, control electrodes 4 are formed on the buffer layers 3. The planatarization of the surface of the antistatic film 5 is made possible by the terrace structures 6G and the execution of the pattern formation by the photoresist mask with high accuracy is made possible.</p> |
