| 摘要 |
PROBLEM TO BE SOLVED: To provide a distributed feedback semiconductor laser diode manufactured without using complicated processes, wherein stable single vertical mode oscillation is possible. SOLUTION: A distributed feedback semiconductor laser diode is provided with an active layer 2 and a diffraction grating layer 11 between a P-type clad layer 4 and an N-type clad layer 3, and the diffraction grating layer 11 consists a first region 11a containing a phase shift part 6 and a second region 11b positioned on both sides of the first region 11a, and a period of the first region 11a is made longer than that of the second region 11b.
|
