发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To improve reliability by preventing a formed compound AuIn or AuSn from being fragile so that junction strength of a junction part is improved, when an Au plated layer of a metal pedestal and a rear surface of a submount are jointed together with a solder containing In or Sn in between, in a semiconductor laser wherein a semiconductor laser chip is fixed to the metal pedestal with the submount in between. SOLUTION: A recessed part 11 is formed on the surface of a metal pedestal 9, an a solder 13 is prevented from swelling out to the peripheral part of a submount 8 at melting at jointing, to secure a specified amount of film thickness of the solder 13, so that for compound AuIn or AuSn formed at jointing, the weight composition ratio of Au of the AuIn does not exceed 50%, and that of AuSn does not exceed 20%, so as to obtain a low-melting compound of superior quality.
申请公布号 JP2000068583(A) 申请公布日期 2000.03.03
申请号 JP19980231658 申请日期 1998.08.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHII MITSUO
分类号 H01S5/00;H01S5/30;(IPC1-7):H01S5/30 主分类号 H01S5/00
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