| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method for a semiconductor and its device which can obtain the semiconductor having a high flatness degree and a uniform surface condition. SOLUTION: A silicon wafer W is immersed in etching liquid poured into an etching vessel 11 and etching on both front and rear surfaces is made. In this case while the silicon wafer W being rotated, at the same time, it is shaken in each rotating direction (X-direction), left and right direction (Y-direction) within a vertical surface corresponding to the rotating direction and vertical direction (Z-direction). At the result, for example, a big stirring operation between the silicon wafer and etchant is occurred in a wafer magazine 10 where many silicon wafers are contained. By this means the silicon wafer W, having high planarity and uniform surface conditions, can be manufactured.
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