发明名称 MANUFACTURING METHOD FOR ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce substrate damages when patterning for electrodes by reactive ion etching is made. SOLUTION: Film made of an electrode film 12 made of Al-1 wt.% Cu is made on an LiTaO3 substrate 11, and a resist pattern 13 is formed on the electrode film 12. Reaction ion etching for the electrode film 12 is so made by using chloride gas 0.5 to 1,000 nm of the electrode film 12 as to remain. After that etching for the remaining electrode film 12 is made by Ar ion milling being slightly over etching and the electrode film 12 is eliminated completely.
申请公布号 JP2000068251(A) 申请公布日期 2000.03.03
申请号 JP19980234191 申请日期 1998.08.20
申请人 MURATA MFG CO LTD 发明人 KOSHIDO YOSHIHIRO
分类号 H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;H01L41/09;H01L41/18;H01L41/22;H01L41/29;H03H3/08 主分类号 H01L21/28
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