| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance high-reliability semiconductor device in which a MOS transistor and a bipolar transistor(s) of double-polysilicon structure are consolidated, by forming the collector electrode of a transistor with a stacking composite of a first conductive film, a barrier metal film, and a second conductive film. SOLUTION: This semiconductor device is constituted by an n-type epitaxial layer 103 formed on a p-type silicon semiconductor substrate 101 in which n-type buried diffused layers 102 and a device isolation region on its upper layer are formed, while an NPN transistor consisting of base, emitter and collector, an L-PNP consisting of emitter, collector and base, and an N-MOS transistor, are formed on the surface of the semiconductor substrate. The collector electrode of the NPN transistor and the base electrode of the L-PNP transistor are made of a stacking composite 123c, 123f of a polysilicon film 109b, 109c, a barrier metal layer and an aluminum wiring film, respectively, wherein the polysilicon film 109 is composed of the same conductive material as that of the gate electrode of the N-MOS transistor.
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