| 摘要 |
PROBLEM TO BE SOLVED: To reduce p-side contact resistance greatly, reduce the operation voltage of an element and provide an element life and reliability of a practical level by using polycrystalline silicon as a contact layer with p-side electrode. SOLUTION: A semiconductor laser device is formed on a sapphire substrate 10. A hexagonal undoped GaN layer 32 and an n-GaN layer 33 are formed on a sapphire substrate 31 and an active layer 36, etc., having a multiquantum well structure wherein an n-GaN optical guide layer 35, etc., are laminated is formed and a p-GaN layer 39 is further formed on an upper part thereof one by one. The sapphire substrate 10 wherein a nitride semiconductor lamination structure is formed is formed is unloaded from an MOCVD device and then polycrystalline silicon 40 whereto B is added is deposited on the p-GaN layer 39 by a vacuum CVD device. Furthermore, a p-side electrode 41 is provided in an upper surface of the B-doped polycrystalline silicon layer 40 and an n-side electrode 42 is provided in an upper surface part wherein an n-AlGaN clad layer 34 is not laminated on the n-GaN layer 33. |
