| 摘要 |
PROBLEM TO BE SOLVED: To obtain a good insulating film by plasma treating with N2O gas and O2 gas or plasma treating with N2 gas and NH3 gas on a surface of the film formed by a plasma CVD method. SOLUTION: An amorphous carbon hydrogen film, an amorphous carbon fluorine film or an amorphous silicon film is generated as a first insulating film 3 on a surface of a semiconductor substrate 1 formed with an element or wiring pattern 2 on its surface in a plasma reaction chamber by a plasma CVD method. Then, a surface of the formed film 3 is plasma treated. As the plasma treating, in the case of applying an APL film as a second insulating film 4, N2O, O2 plasma treatings are executed in the same reaction chamber. As the film 4, in the case of applying a TEOS O3 film, after the film 3 is formed, N2, NH3 plasma treatings are executed in the chamber.
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