发明名称 METHOD FOR ANNEALING OXIDE INSULATING FILM
摘要 PROBLEM TO BE SOLVED: To treat by illuminating an ultraviolet ray with ozone of a specific concentration in a short time by treating while heating a sample formed with an oxide insulating film at a specific temperature, thereby reducing a leakage current necessary as insulating film characteristics. SOLUTION: A capacitor using a tantalum oxide film has a structure in which a Ta2O5 of an insulating film is vapor deposited on a lower electrode of a poly-Si by a CVD, annealed and then an upper electrode of a TiN is formed. A low pressure mercury vapor lamp 4 for mainly radiating rays having 185 and 254 nm of wavelengths is disposed in an upper lamp chamber of an annealing room, gas piping 9 is connected to a nozzle hole of an ultraviolet transmission glass from an exterior via the lamp chamber, and ozone of a high concentration generated by an ozonizer is supplied to the annealing room. The annealing temperature in the case of annealing is 350 (for 10 min) to 600 deg.C (for 5 min), and the ozone concentration is set to a range of 10 to 200 g/m2. After the annealing, the ozone is switched to nitrogen, and the film is naturally cooled to 300 deg.C, and taken out of the room.
申请公布号 JP2000068265(A) 申请公布日期 2000.03.03
申请号 JP19980255956 申请日期 1998.08.25
申请人 JAPAN STORAGE BATTERY CO LTD 发明人 HOSOYA KOJI;MIBU HIROAKI
分类号 H01L21/26;H01L21/316;H01L21/8242;H01L27/108 主分类号 H01L21/26
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