发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR PREVENTING ELECTROSTATIC BREAKDOWN THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent static electricity from flowing into an inner circuit even if static electricity is charged to a probe by constituting an electrode pad with a plane pad part and an air bridge part which is connected to the pad part and crosses the pattern wiring of the inner circuit with a prescribed gap. SOLUTION: A probe 32 grounded to the other end is brought into contact with a pad part 22. Then, a probe 30 whose other end is connected to a test device 31 and which applies power voltage for test Vcc to a DC pad 4 is brought into contact with an air bridge part 23. Static electricity charged to the probe 30 is discharged through the probe 32. Then, the probe 30 is pressed to a substrate 10-side, and an air bridge part 23 is brought into contact with a pattern wiring 21. Thus, the probe 30 and the pattern wiring 21 are electrically connected. Even if static electricity is charged to the probes of the test device and the bonding device, static electricity is prevented from flowing into an inner circuit.
申请公布号 JP2000068320(A) 申请公布日期 2000.03.03
申请号 JP19980238692 申请日期 1998.08.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 KURUSU HITOSHI;HOSHI HIROYUKI
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址