| 摘要 |
PROBLEM TO BE SOLVED: To improve flatness of a multi-layer wiring structure and to allow a conductive film to be more favorably placed into a connecting hole, by having the etching rate of etching back to be almost equal to the grinding rate of chemical mechanical polishing, regarding a conductive film and a barrier metal film. SOLUTION: An interlayer insulating film 7 composed of an SOG film 6 and a silicon oxide film is formed on a semiconductor substrate 1, a connecting hole is formed in the interlayer insulating film, and a barrier metal film 9 is formed on an inner wall of the connecting hole. A conductive film 10 is formed so as to be placed into the connecting hole on the barrier metal film 9. On the conductive film 10, an upper wiring 20 is formed so as to be connected to the conductive film 10. In this semiconductor device, the upper parts of the conductive film 10 and the barrier metal film 9 are flattened by etching back or chemical and mechanical grinding. The conductive film 10 and the barrier metal film 9 have virtually the same etching speed of etching back or virtually the same grinding speed of chemical mechanical polishing.
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