| 摘要 |
PROBLEM TO BE SOLVED: To apply an organic protective film as a spacer by forming a thickness of the film plural times or more as large as that of a second metal layer. SOLUTION: The method for forming an electrode of a semiconductor device comprises the steps of selectively removing silicon oxide films 10a, 11, exposing a surface of an N type lightly doped layer 2 and a surface of a P type heavily doped layer 4, depositing a layer containing aluminum as a main component, selectively removing the aluminum layer, and forming an aluminum electrode 101. The method further comprises the steps of coating surfaces of the electrode 101 and the film 11 with a gel-like polyimide by a spin coating method, heat- treating it to form a polyimide film of 23,000Å, continuously twice repeating the polyimide coating and the heat-treating steps to form a polyimide film 13 of 46,000Å, then heat-treating it, and forming a photoresist film 12 on the film 13. The method further comprises the steps of then opening a window at the film 12 by a photolithography process, then removing the film 13 by isotropically etching, and exposing the surface of the electrode 101. |
