发明名称 |
MINUTE PATTERN FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of stably forming a minute pattern on a surface of a substrate with a comparatively low applied voltage without breaking a probe and the surface of the substrate. SOLUTION: A probe 2 with a sharp tip is approached onto a surface of a substrate whose bonds of the surface are terminated with a different substance so that a substance provided on a tip part of the probe 2 chemically reacts with the different substance on the surface of the substrate. Thereby, a substance state of the surface of the substrate is partially changed so that a pattern mask of an atomic size is formed on the substrate. By this minute pattern forming method, a mask pattern for a silicon-based integrated circuit, or the like, can be formed with ease.
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申请公布号 |
JP2000067799(A) |
申请公布日期 |
2000.03.03 |
申请号 |
JP19980234290 |
申请日期 |
1998.08.20 |
申请人 |
AGENCY OF IND SCIENCE & TECHNOL |
发明人 |
MORITA YUKINORI;TOKUMOTO HIROSHI |
分类号 |
H01J37/30;H01L21/30;(IPC1-7):H01J37/30 |
主分类号 |
H01J37/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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