发明名称 MINUTE PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method capable of stably forming a minute pattern on a surface of a substrate with a comparatively low applied voltage without breaking a probe and the surface of the substrate. SOLUTION: A probe 2 with a sharp tip is approached onto a surface of a substrate whose bonds of the surface are terminated with a different substance so that a substance provided on a tip part of the probe 2 chemically reacts with the different substance on the surface of the substrate. Thereby, a substance state of the surface of the substrate is partially changed so that a pattern mask of an atomic size is formed on the substrate. By this minute pattern forming method, a mask pattern for a silicon-based integrated circuit, or the like, can be formed with ease.
申请公布号 JP2000067799(A) 申请公布日期 2000.03.03
申请号 JP19980234290 申请日期 1998.08.20
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 MORITA YUKINORI;TOKUMOTO HIROSHI
分类号 H01J37/30;H01L21/30;(IPC1-7):H01J37/30 主分类号 H01J37/30
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