| 摘要 |
PROBLEM TO BE SOLVED: To reduce threshold voltage variation by approximately equalizing the thermal expansion coefficients of interlayer films (insulation films) deposited on a semiconductor substrate in a semiconductor device, and manufacture thereof. SOLUTION: An interlayer film 2 of AlN (insulation film), etc., is deposited on a compd. semiconductor substrate 1, openings 5 are formed through this film, an electrode film 3 is formed over the openings 5, or before the formation of the electrode film 3, impurity regions 4 are formed, using the interlayer film 2 as a mask. This chemically stabilizes the interface between the compd. semiconductor substrate 1 and interlayer film (insulation film) 2 and allows the depth of the impurity region 4 to be accurately controlled, if the interlayer film 2 is used as the mask.
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