| 摘要 |
PROBLEM TO BE SOLVED: To stably provide and epitaxial wafer, in which a light output is made extremely uniform when using this as a LED(light emitting diode), and in identical array and inter-chip output difference is made extremely small when using this as an LED array, by making uniform the carrier concentration in a III-V compound semiconductor layer containing Ga and As as constituting elements. SOLUTION: This method for manufacturing an epitaxial wafer, in which a III-V compound semiconductor layer is laminated on a monocrystal substrate comprises a process for introducing material gas to a reaction container for fulfilling an expression [III]/[V] is 0.23 or smaller, and causing epitaxially grown a III-V compound semiconductor layer containing Ga and As as constituting elements on a monocrystal substrate arranged in a reaction container by a vapor phase epitaxy method. In the inequality, [III] indicates the number of group III atoms in the material gas which are introduced to the reaction container per a unit time, and [V] indicates the number of group V atoms introduced to the reaction vessel per unit time.
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