| 摘要 |
PROBLEM TO BE SOLVED: To ensure high resolving power and superior dry etching resistance by using a specified resin, a compd. which generates an acid when irradiated with active light or radiation and a solvent. SOLUTION: The positive photoresist compsn. contains (a) a copolymer having structural units of formulae I, II and III, (b) a compd. which generates an acid when irradiated with active light or radiation and (c) a solvent. In the formulae I-III, R1 and R2 may be the same or different and are each H or 1-3C alkyl and X is a divalent org. group. In the formula II, R1' and R2' may be the same or different and are each H or 1-4C alkyl, W is a divalent org. group and R3' is chain alkyl which may have substituents having 11-20 carbon atoms in total, aryl which may have substituents having 11-30 carbon atoms in total, aralkyl which may have substituents having 12-30 carbon atoms in total or the like. |
