| 摘要 |
PROBLEM TO BE SOLVED: To attain by means of cleaning gas, the cleaning of the whole inner wall of a gas outputting means such a nozzle. SOLUTION: A multi-system nozzle type CVD device is provided with a reaction tube 37, nozzles 43, 44, and 45, and a gas supply system 32. The reaction tube 37 forms a closed reaction space for forming a prescribed thin film on the wafer of a semiconductor device by using reaction gas. The nozzles 43, 44, and 45 output the reaction gas to the reaction space 34 at film forming. The gas supply system 32 supplies the reaction gas to the nozzles 43, 44, and 45 at film forming, and supplies cleaning gas to the nozzle 43, 44, and 45 when are removed reaction products which accumulated on the inner walls of the nozzles 43, 44, and 45 due to the film formation processing.
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