FERROELECTRICS THIN FILM ELEMENT AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a ferrelectrics thin film element having a ferroelectrics thin film of a perovskite oxide excellent in orientation and its manufacturing method. SOLUTION: A ferroelectrics thin film element 10 contains a single crystal substrate 12 on which a conductive thin film 14 is formed with sputtering. A ferroelectrics thin film 16 is formed on the conductive thin film 14 in a MOCVD method. The ferroelectrics thin film 16 contains a first layer 18 changed in composition as tending from the conductive thin film 14 toward to the thickness of the thin film, on which a second layer 20 of fixed composition is formed. At a boundary between the first layer 18 and the second layer 20, the composition of the first layer 18 is made similar to the composition of the second layer 20. When the first layer 18 is formed, ferroelectrics material is supplied onto the conductive thin film 14 while changing a composition ratio.