| 摘要 |
PROBLEM TO BE SOLVED: To provide a pin type semiconductor photodetecting element capable of reducing power consumption and bias voltage. SOLUTION: Within this pin type semiconductor photodetecting element 100, an InGaAsP photoabsorbing layer is composed of an impurity implanted photoabsorbing layer 104 in higher impurity concentration than that in i layer 105 and the i layer in low inputity concentration. The impurity implanted photoabsorbing layer 104 in the composition reducing the band gap energy per payer from n type layer clad layer side to p type clad layer side to be formed in semiconductor laminated structure of multiple layers 104A, B, C reducing the impurity concentration.
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