| 摘要 |
PROBLEM TO BE SOLVED: To give a favorable luminous output to a semiconductor laser element and to make it possible to actuate stably the laser element even if a high frequency is superposed on the laser element. SOLUTION: A semiconductor laser element 1 consists of a clad layer 3, an active layer 4 and a clad layer 5, which are laminated in order on a substrate 2, a ridge 8 consisting of a clad layer 6 and a gap layer 7, which are laminated in order on this layer 5, current constricting layers 9, which pinch the ridge 8 between them and are formed on the layer 6, and a contact layer 10, which is formed on the ridge 8 and the layers 9. The layers 9 are respectively formed by laminating in order a second conductivity type layer 9a, a first conductivity type layer 9b and a second conductivity type layer 9c, the carrier concentration in the layers 9a is set lower than the carrier concentration in the layer 6 and the carrier concentration in the layers 9b is set higher than the carrier concentration in the layers 9a and 9c. |
