| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a compact semiconductor device with superior controllability at generation various electric states, such as the case of storing multilevel information. SOLUTION: Various voltages VM are generated at a floating gate FG, corresponding to the combination of the voltages V1 and V2 which are applied to two control gates CG1 and CG2. Thus, even if the number of the level of the respective voltages is small, various voltages VM are generated at the floating gate FG. Thus, the control for generating various voltages VM at the floating gate FG is facilitated. Also the respective control gates CG1 and CG2 are stacked up in the height direction of a memory cell MC, while insulating them from each other. Thus, even if the number of the control gates becomes large, the projection area of the memory cell MC is not increased so much.</p> |
