| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve periodical thin film fluctuations in a substrate diameter direction at film forming by using a vapor phase thin-film growing device. SOLUTION: Material gas and carrier gas is introduced from material gas inlet holes 2a-2d arrayed in a row with respect to a rotary suscepter 4, on which a semiconductor substrate W is placed to the main face of the semiconductor substrate W in parallel as shown by the arrows A, B, C, and D. Although the concentrations of the material gases are made maximum on the extended lines of the centers of the openings of the original gas inlet holes 2a-2d on the main face of the semiconductor substrate W, a virtual central axis X2 of the material gas inlet ports 2a-2d is shifted from a virtual central axis X1 of the semiconductor substrate W by shifted amount S, so that the concentration of the material gas to which a certain spot on the substrate is exposed can be efficiently made uniform according to the rotation of the semiconductor substrate W. As a result, a thin film whose film thickness uniformity is high can be formed.</p> |
