发明名称 RESIST MATERIEL AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a resist material excellent in PED stability, preventing trailing phenomenon a basic substrate, having a wide focus margin and capable of forming a pattern suitable for precise fine working by incorporating an α,β,γ,δ-unsatd. cyclic carbonyl compd. SOLUTION: The resist material contains an α,β,γ,δ-unstad. cyclic carbonyl compd., an org. solvent, an alkali-insoluble or slightly alkali-soluble base resin having an acidic functional group protected with an acid labile group and an acid generating agent and preferably contains a basic compd. The resin has a wt. average mol.wt. of 5,000-100,000 and is made alkali-soluble when the acid labile group is released. The resist material is excellent in PED stability, hardly causes trailing phenomenon on a basic substrate, has a wide focus margin, is excellent in adaptability to a process and can form a pattern suitable for precise fine working.
申请公布号 JP2000066403(A) 申请公布日期 2000.03.03
申请号 JP19980252033 申请日期 1998.08.21
申请人 SHIN ETSU CHEM CO LTD 发明人 YANAGI YOSHIAKI;WATANABE SATOSHI;KANEKO TATSUSHI;KOIZUMI KENJI;NAGURA SHIGEHIRO;ISHIHARA TOSHINOBU
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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