EVALUATION OF SEMICONDUCTOR SUBSTRATE, AND MANAGEMENT OF SEMICONDUCTOR DEVICE MANUFACTURING STEPS

摘要

PROBLEM TO BE SOLVED: To obtain a method for distinctively detecting only a depth of damaged layer of a semiconductor substrate which will have characteristic problems, on a semiconductor device. SOLUTION: An Si substrate 1 is placed on a stage 2, a mercury electrode 3 forming a Schottky barrier with the substrate 1 is contacted with a surface of the substrate 1. When a constant current is fed from a constant-current source 4 to between the electrode 3 and substrate 1, charges are trapped at a trap center within the damaged layer of the substrate 1 and a potential of a conduction band in the vicinity of the surface of the substrate 1 is increased. When a voltage between both is increased in accordance with the increase of the potential, a constant current flows. Since when a change of the voltage with time (a change in the voltage when saturated) is measured, a defective density can be estimated, thereby the depth of only those a damaged layers with large damages are detected.