| 摘要 |
A power transistor device, for example a MOSFET or an IGBT, comprises a semiconductor body (10) which accommodates an array (11) of parallel device cells (1a) in which heat is generated in operation of the device. A hot-location temperature sensor (Mh) is located inside the array (11), and a cool-location temperature sensor (Mc) is located outside the array (11). These sensors each comprises at least one sensor cell (1b; 1c) which is of the same transistor type as the device cells (1a). The sensor cells (1b; 1c) have a cellular region structure (12, 13, 14, 15) similar to that of the device cells (1a), but each sensor (Mh; Mc) has a respective output electrode (31; 32) separate from electrodes (22, 23, 25) of the device cells (1a). A detection circuit (100, 101) is coupled to the respective output electrodes (31; 32) of the hot-location and cool-location temperature sensors (Mh; Mc) for detecting a temperature difference between the hot and cool locations by comparing voltage signals (dV(T)) from the output electrodes (31; 32).
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