ELECTRONIC DEVICES WITH BARRIER FILM AND PROCESS FOR MAKING SAME

摘要

A semiconductor device having a barrier film (47) comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film (47, 49) is used for preventing the diffusion of atoms of another material (45) such as copper conductor, into a substrate (46), such as a semiconducting material or an insulating material, and an oxide layer (48). Methods for making the barrier film (47) in a semiconductor device are also covered. The extremely thin barrier film (47, 49) makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.