发明名称 METHOD FOR PRODUCING INTEGRATED SWITCHING CIRCUITS AND SEMICONDUCTOR WAFER COMPRISING INTEGRATED SWITCHING CIRCUITS
摘要 The invention relates to a method for producing integrated switching circuits. A semiconductor wafer (20) exhibits an active surface with circuit structures. An electrically isolating intermediate layer (22) and an electrically conductive sheet are applied onto said active surface. Printed conductors (9) with connection balls are formed on said conductive sheet in a relatively coarse grid. Said semiconductor wafer (20) is then divided into integrated circuits.
申请公布号 WO0011715(A1) 申请公布日期 2000.03.02
申请号 WO1999DE02412 申请日期 1999.08.02
申请人 SIEMENS AKTIENGESELLSCHAFT;HACKE, HANS-JUERGEN 发明人 HACKE, HANS-JUERGEN
分类号 H01L21/60;H01L23/498 主分类号 H01L21/60
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