METHOD OF FORMING A TRENCH ISOLATION IN A SEMICONDUCTOR DEVICE,申请号KR19920021816-传众专利搜索

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发明名称	METHOD OF FORMING A TRENCH ISOLATION IN A SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100244402(B1)	申请公布日期	2000.03.02
申请号	KR19920021816	申请日期	1992.11.19
申请人	HYUNDAI ELECTRONICS IND. CO.,LTD	发明人	MUN, CHANG-SUN;PAK, DAE-IL;PAK, SANG-HUN
分类号	H01L27/04;H01L21/76;H01L21/762;H01L21/763;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/76	主分类号	H01L27/04
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