| 摘要 |
In a method of accurately determining an area that has been changed to an amorphous state which uses a computer simulation of a semiconductor manufacturing process, the impurity concentration (11) at the crystalline-amorphous boundary is taken as the parameter C. The value obtained by dividing the implanted ion concentration obtained by means of an ion implantation simulator by the parameter Ca is defined as the amorphous conversion ratio parameter (12), and a region in which this amorphous conversion ratio parameter (12) is 1 or greater is taken to be an area that is converted to an amorphous state. <IMAGE> |
