| 摘要 |
<p>To realize a high frequency power detection circuit constituting a detection circuit by a GaAs semiconductor and thereby capable of realizing a small sized, low cost, and broad band detection circuit and capable of suppressing variations in the detection characteristics due to variations in a pinchoff voltage of the field effect transistors, the present invention is a detection circuit for detecting an envelope of a high frequency signal, comprising a field effect transistor (Q1) to the gate of which the high frequency signal is input, a gate bias circuit (61) for providing a gate bias voltage to the gate of the field effect transistor, a capacitor (Cd) connected between the drain of the field effect transistor and the ground, and a load capacitor (CL)and a load resistor (RL) connected in parallel between the source of the field effect transistor and the ground, wherein a detection signal (Vout) corresponding to the envelope of the high frequency input signal is output from the source of the field effect transistor. <IMAGE></p> |
