| 摘要 |
The invention is directed to a high-frequency semiconductor laser module with a silicon substrate, especially made of low-impedance silicon, a laser diode arranged thereon, and at least two lines for the H-F feed, one of which is insulated from the silicon substrate by a dielectric layer. According to the invention, the laser diode is arranged on the silicon substrate via a metallic mounting layer, and the H-F line is guided close to the laser diode on the dielectric layer. |
