Semiconductor memory device having capacitor-over-bitline cell with multiple cylindrical storage electrode offset from node contact and process of fabrication thereof

摘要

A storage capacitor with a double cylindrical storage electrode is incorporated in a semiconductor dynamic random access memory cell, the double cylindrical storage electrode is electrically connected through a node contact hole to a source region of a switching transistor, the double cylindrical storage electrodes are offset from the associated node contact holes so as not to have the minimum dimension in the planar configuration thereof, and cylinders are multiplied on a base portion of the storage electrode.