发明名称 |
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof |
摘要 |
A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.
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申请公布号 |
US6031288(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19960747392 |
申请日期 |
1996.11.12 |
申请人 |
HITACHI, LTD. |
发明人 |
TODOROBARU, HIROMI;MIURA, HIDEO;SUZUKI, MASAYUKI;NISHIHARA, SHINJI;IKEDA, SHUJI;SAHARA, MASASHI;ISHIDA, SHINICHI;ABE, HIROMI;OGISHIMA, ATUSHI;UCHIYAMA, HIROYUKI;ABE, SONOKO |
分类号 |
H01L21/28;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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