发明名称 |
Germanium and arsenic double implanted pre-amorphization process for salicide technology |
摘要 |
A method for forming salicide contacts and polycide conductive lines in integrated circuits is described which employs the ion implantation of both germanium and arsenic into polysilicon structures and into source/drain MOSFET elements is described. The method is particularly beneficial in the manufacture of sub-micron CMOS integrated circuits. Germanium is implanted into the polysilicon and into the source/drain surfaces forming a amorphized surface layer. Next a low dose, low energy arsenic implant is administered into the amorphized layer. The low dose shallow arsenic implant in concert with the amorphized layer initiates a balanced formation of titanium suicide over both NMOS and PMOS devices in CMOS integrated circuits without degradation of the PMOS devices with an accompanying reduction of gate-to-source/drain shorts. Amorphization by the electrically neutral germanium ions permits the use of a lower dose of arsenic than would be required if arsenic alone were implanted. The combined amorphization effect of the germanium and arsenic implants also facilitates a suicide phase transition on sub-micron wide polycide lines thereby improving their conductivity.
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申请公布号 |
US6030863(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19980151952 |
申请日期 |
1998.09.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHANG, SHOU-ZEN;TSAI, CHAOCHIEH;LIN, CHENG KUN;YANG, CHI MING |
分类号 |
H01L21/265;H01L21/28;H01L21/285;H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
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主权项 |
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地址 |
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