Method of producing intrinsic p-type HgCdTe using CdTe capping layer

摘要

A hybrid focal plane array has Hg1-xCdxTe junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.