发明名称 Low magnet-saturation bismuth-substituted rare-earth iron garnet single crystal film
摘要 A low magnetic saturation type bismuth-substituted rare-earth iron garnet crystal film of the invention is grown on a substrate of (111) garnet single crystal (GdCa)3(GaMgZr)5O12 by using a liquid phase epitaxial method. This single crystal has a lattice constant of 1.2497+/-0.0002 nm and has a chemical structural formula expressed by Tb3-xBixFe5-y-zGayAlzO12 wherein x has the range 1.25<x<1.40, y+z has the range 0.50<y+z<0.65, and z/y has the range 0.45<z/y<0.75.
申请公布号 US6031654(A) 申请公布日期 2000.02.29
申请号 US19980081941 申请日期 1998.05.21
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 HIRAMATSU, KIYONARI;SHIRAI, KAZUSHI;TAKEDA, NORIO
分类号 C30B29/28;G02F1/00;G02F1/09;G02F1/095;H01F10/24;H01F41/28;(IPC1-7):G02F1/09 主分类号 C30B29/28
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