发明名称 |
Low magnet-saturation bismuth-substituted rare-earth iron garnet single crystal film |
摘要 |
A low magnetic saturation type bismuth-substituted rare-earth iron garnet crystal film of the invention is grown on a substrate of (111) garnet single crystal (GdCa)3(GaMgZr)5O12 by using a liquid phase epitaxial method. This single crystal has a lattice constant of 1.2497+/-0.0002 nm and has a chemical structural formula expressed by Tb3-xBixFe5-y-zGayAlzO12 wherein x has the range 1.25<x<1.40, y+z has the range 0.50<y+z<0.65, and z/y has the range 0.45<z/y<0.75.
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申请公布号 |
US6031654(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19980081941 |
申请日期 |
1998.05.21 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
HIRAMATSU, KIYONARI;SHIRAI, KAZUSHI;TAKEDA, NORIO |
分类号 |
C30B29/28;G02F1/00;G02F1/09;G02F1/095;H01F10/24;H01F41/28;(IPC1-7):G02F1/09 |
主分类号 |
C30B29/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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