发明名称 Improvements in Semiconductor Devices.
摘要 1,161,782. Frequency changes. ASSOCIATED SEMICONDUCTOR MFGS. Ltd. 24 Aug., 1966 [26 Aug., 1965], No. 36655/65. Heading H3T. [Also in Division H1] A Gunn diode 22 having both its terminals on the same plane surface (see Division H1) is used as the local oscillator in a frequency changer circuit. The other components of the circuit are the input signal connection 33, an I.F. transformer 34-37 and a pair of Shottky barrier diodes 41, 42 connected to the output conductor 44. The circuit is in the form of an integrated circuit having a substrate 21 on the lower surface of which there is a chromium and gold layer forming a microstrip transmission line.
申请公布号 GB1161782(A) 申请公布日期 1969.08.20
申请号 GB19650036655 申请日期 1965.08.26
申请人 ASSOCIATED SEMICONDUCTOR MANUFACTURERS LIMITED 发明人 CLIVE ARTHUR PEIRSON FOXELL;JOHN GILBERT SUMMERS
分类号 H01L23/482;H01L27/00;H01L47/00;H01L47/02 主分类号 H01L23/482
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