CLEANING OF METAL-ORGANIC MATTER CHEMICAL VAPOR DEPOSITING CHAMBER ON THE SPOT

摘要

PROBLEM TO BE SOLVED: To provide a method for cleaning metallic deposited by-products from the surface of a metal-organic matter chemical vapor depositing(MOCVD) chamber on the spot. SOLUTION: This is a method for cleaning metallic deposited by-products from the surface in an environmental chamber for metal-organic matter chemical vapor deposition(MOCVD) of an integrated circuit(IC) and contains (a) a step in which the metallic deposited by-products on the surface to be cleaned are oxidized, (b) a step in which the hydrolyzed vapor of hexafluoroacetylacetonate(Hhfac) is introduced into the chamber, and the metallic deposited by-products oxidized in the step (a) are volatiled and (c) the metallic deposited by-products volatiled in the step (b) are removed, by which the surface of the chamber can be cleaned without dismantling the chamber.