发明名称 |
Self-aligned copper interconnect architecture with enhanced copper diffusion barrier |
摘要 |
A via is formed in a semiconductor device using a self-aligned copper-based pillar to connect upper and lower copper interconnect layers separated by a dielectric. The lower interconnect layer is formed on an underlying layer. The copper-based via pillar is formed on the lower interconnect layer. The upper interconnect layer is formed to make electrical contact to the exposed upper surface of the via pillar. Conductive diffusion barrier material is formed on vertical sidewalls of the lower interconnect layer.
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申请公布号 |
US6030896(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19990295892 |
申请日期 |
1999.04.21 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BROWN, KEVIN C. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/476;H01L21/44;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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