发明名称 Advanced etching method for VLSI fabrication
摘要 The present invention provides a method of etching microelectronic structures. The method utilizes an ion implantation device projecting ions into a silicon semiconductor or conducting substrate to selectively damage the surface causing damage differential. This process is highly controllable and directable, allowing fine manipulation of the substrate surface. After the ion implantation has destroyed selected portions of the surface, standard etching techniques known in the art can be used to selectively remove the damaged portions of the surface. The advantage of this technique is that it confers upon relatively imprecise prior art etching techniques a high degree of precision. Such techniques can be used to create isolation trenches by filling the surface with electrically isolating materials which isolate one semiconductor device from another.
申请公布号 US6030898(A) 申请公布日期 2000.02.29
申请号 US19970994707 申请日期 1997.12.19
申请人 ADVANCED MICRO DEVICES, INC. 发明人 LIU, YOWJUANG W.
分类号 H01L21/306;H01L21/308;(IPC1-7):H01L21/00 主分类号 H01L21/306
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