发明名称 Electronic circuit
摘要 An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 ANGSTROM , e.g., between 100 and 750 ANGSTROM . A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
申请公布号 US6031290(A) 申请公布日期 2000.02.29
申请号 US19980041702 申请日期 1998.03.13
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAZAKI, MINORU;MURAKAMI, AKANE;CUI, BAOCHUN;YAMAMOTO, MUTSUO
分类号 H01L21/28;C23C14/34;G02F1/133;G02F1/136;G02F1/1368;G09F9/35;H01L21/00;H01L21/02;H01L21/3205;H01L21/60;H01L21/70;H01L21/768;H01L21/77;H01L21/84;H01L23/52;H01L23/522;H01L23/532;H01L27/092;H01L27/12;H01L29/45;H01L29/786;H05B33/08;H05B33/10;H05B33/12;H05B33/26;(IPC1-7):H01L23/48;H01L29/40 主分类号 H01L21/28
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