| 摘要 |
A burying-heterostructure (BH) type semiconductor laser having a constricted mesa which has an active region. The laser has two spaces, located above and below the active region, for constricting a current to reduce a leakage current. The laser further has a first group of columns extending through the space located above the active region, and a second group of columns extending through the space located below the space. The columns of the first group are staggered in a vertical plane, with respect to the columns of the second group.
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