Internal power supply voltage generating ciruit and the method for controlling thereof

摘要

A memory device includes first, second, and third discharging units, which are connected to a negative voltage node, for discharging the negative voltage to a ground voltage through three steps which are sequentially conductive. The first discharging unit discharges the negative voltage in response to a first signal and a second signal. It does so when the negative voltage is a first voltage level. The second discharging unit discharges the negative voltage in response to the second signal and a third signal. It does so when the negative voltage is a second voltage level. The third discharging unit discharges the negative voltage in response to a fourth signal and a fifth signal. It does so when the negative voltage is a third voltage level.