Quadruple gate field effect transistor structure for use in integrated circuit devices

摘要

A quadruple gate field effect transistor (FET) is provided in a silicon-on-insulator or semiconductor-on-insulator (SOI) structure. The silicon substrate is surrounded by a polysilicon material on at least three sides to form a gate. Additionally, the substrate can be surrounded by a fourth side to form a quadruple gate structure. The quadruple gate provides superior current densities across the channel region of the FET. A metal via can be provided to the silicon substrate to avoid floating substrate effects. A flexible support substrate may be coupled to an oxide layer.