| 摘要 |
In the MOS FET semiconductor device having a LDD structure, a polysilicon layer of which a side wall film is formed is provided, the polysilicon layer is made conductive by doping an impurity by ion-implantation. The side wall film of conductive polysilicon can be used as a wiring by applying voltages to the end portions of the side wall film. The side wall film can be used not only as a wiring, but also as a resistor layer. The side wall film may be formed on the side surface of a resistor layer. The side wall film can be used as a wiring by doping impurity into the side wall film by ion-implantation so as to make the side wall film conductive. By virtue of these structures, the semiconductor chip in the semiconductor device can be reduced in size.
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