| 摘要 |
PCT No. PCT/JP96/03470 Sec. 371 Date Apr. 28, 1998 Sec. 102(e) Date Apr. 28, 1998 PCT Filed Nov. 27, 1996 PCT Pub. No. WO97/44820 PCT Pub. Date Nov. 27, 1997A semiconductor manufacturing system performs etching, ashing and CVD to form a thin film, using a gas plasma. An apparatus for treatment under a reduced pressure has two treatment chambers (23), a first load-lock chamber (21) connected to the treatment chambers, and second load-lock chambers (22) connected to the first load-lock chamber, the first and second load-lock chambers being set at the same pressure, wherein a disc (19) is disposed in the first load-lock chamber, the disc having a central shaft with four stage units (30) fixed thereto, the stage units permitting substrates to be rested thereon, and by a vertical movement and a rotative conveyance motion such as 180 DEG rotation of the disc there are formed the treatment chambers and the second load-lock chambers simultaneously with the conveyance of the substrates. The formation of the treatment chambers and the second load-lock chambers is effected by moving the disc vertically and thereby providing a seal between an upper cover (24) of the first load-lock chamber and upper covers (25) of the second load-lock chambers and also providing a seal between the upper cover (24) of the first load-lock chamber and upper covers (26) of the treatment chambers.
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